Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Miranda E., Aguirre F.L., Salvador E., González M.B., Campabadal F., Suñé J.breakdown, dielectrics
| Document type | Article |
| Journal title / Source | Solid-State Electronics |
| Volume | 210 |
| Page numbers / Article number | 108812 |
| Publisher's name | Elsevier BV |
| Publisher's address (city only) | Amsterdam, NX, Netherlands |
| Publication date | 2023-12 |
| ISSN | 0038-1101 |
| DOI | 10.1016/j.sse.2023.108812 |
| Language | English |